conductivity modulation

基本解释

IGBT combines the features of voltage-control in MOS devices and conductivity modulation in bipolar devices.
IGBT是一种具有MOS电压控制和双极导通调制相结合的器件。
The modeling and analysis methods used here are universal and also can be used in other conductivity modulation power devices.
文中所采用的分析方法具有一定的普适性，其他类似结构和器件亦可采用此方法进行分析。
For specific square wave modulation modes and typical ionospheric conditions, oscillations process of ionospheric conductivity and electrojet are studied in details.
对于特定的方波调制模式和典型的电离层条件下，振荡过程中电离层的导电性和电喷详细地研究。

电导调制
Simultaneously, as the conductivity modulation effect, the forward I-V characteristics are almost invariant.
模拟显示:由于电导调制效应的影响,改进后的4H-SiC PiN二极管能够在保证直流正向I-V特性不变的前提下,加大反向电荷的抽取效率,提高开关速度,而且具有更加优越的软特性,开关速度提高约10%,软度系数S增大30%。
电导调变