high electron mobility transistor

基本解释

High – Electron Mobility Transistor?
高电子活动性晶体管 HEMT?。
In this thesis, a detailed discussion of plasma wave instability in the high-electron-mobility transistor (HEMT) driven by the terahertz radiation is presented.
本学位论文主要围绕高迁移率半导体在太赫兹辐射作用下，沟道内等离子体波振荡特性进行研究。
The subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.
其课题在于，针对氮化镓系的高电子迁移率晶体管，提高二维电子浓度和电子迁移率，并且不产生短沟道效应。