molecular beam epitaxy

基本解释

The samples were grown on sapphire substrate by plasma-assisted molecular beam epitaxy.
样品利用分子束外延技术在蓝宝石衬底上生长。
Molecular-beam epitaxy and dynamic growth with long-range space and temporal correlations are analysed using scaling analysis approach.
用直接标度分析方法研究了分子束外延生长和在长程时间、空间关联条件下的动力生长过程。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助（111）和分子束外延（001）硅衬底上氮化硅缓冲层使用铪。