v-beam

基本解释

K-V beam through an axisymmetric uniform-focusing channel is studied in a particle-core model.
采用粒子-束核模型，对均匀聚焦磁场中满足K-V分布的离子束进行模拟研究。
Based on the result of simulation, the V-shaped beam thermal micro-actuator array is fabricated on a SOI wafer by DRIE.
根据模拟结果，采用SOI硅片和微细加工DRIE技术制作了这种V型梁微执行器并联阵列。
A formula for calculating K1 of a V-notched beam under arbitrary span three points bending is given by the use of superposition techniques.
本文利用叠加原理，给出一适应于任意跨距三点弯曲V形切口梁的应力强度因子的计算公式。